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Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

BS ISO 17560:2014

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon.

ISO 17560:2014

Active

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

Overview ISO 17560:2014 specifies a standardized secondary‑ion mass spectrometry (SIMS) method for depth profiling boron in silicon. It covers procedures using magnetic‑sector or quadrupole mass spec…