BS IEC 63068-2:2019 PDF

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Open preview (PDF)Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Title (English):

BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Document status:

Active

Format:

Electronic (PDF)

Publication date:

February 28, 2019

ICS:

31.080.99

SKU:

BS IEC 63068-2:2019