IEC 60747-8-4:2004 PDF
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
Open preview (PDF)Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applicationsTitle (English):
IEC 60747-8-4:2004
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
- Format:
- Electronic (PDF)
- Number of pages:
- 121
- Publication date:
- September 24, 2004
- Edition:
- IEC IS 60747 edition 1 version 1
- ICS:
- 31.080.30
- Technical committee:
- SC 47E - Discrete semiconductor devices
Description (English):
Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
Technical details
- SKU
- IEC 60747-8-4:2004
