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IEC 60747-9:2007 PDF

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

First page of standard IEC 60747-9:2007Open preview (PDF)Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Title (English):
IEC 60747-9:2007

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Document status:
Active
Format:
Electronic (PDF)
Number of pages:
117
Publication date:
September 26, 2007
Edition:
IEC IS 60747 edition 2 version 1
ICS:
31.080.01
Description (English):

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

Technical details

Technical committee
SC 47E - Discrete semiconductor devices
SKU
IEC 60747-9:2007

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