IEC 62047-26:2016 Overview
IEC 62047-26:2016 is an international standard published by the International Electrotechnical Commission (IEC) that focuses on semiconductor devices and micro-electromechanical systems (MEMS). Specifically, it defines the description and measurement methods for micro trench and needle structures at a micrometer scale. The standard provides detailed parameters, terminology, and measurement techniques for trenches and needle-like features critical in MEMS design and evaluation.
Designed for structures with dimensions in the range of a few micrometers to 100 micrometers, this standard supports manufacturers, researchers, and quality control professionals in achieving precise geometrical assessment and consistent documentation of microstructures.
Key Topics
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Trench Structures in Micro Scale: The standard addresses trench features with depths from 1 µm to 100 µm, widths of walls and trenches between 5 µm and 150 µm, and aspect ratios ranging from 0.0067 to 20. This includes:
- Definition of symbols and terms related to trench geometry.
- Description of trench cross-sections and variations.
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Needle Structures in Micro Scale: The document specifies needle-shaped microstructures with three or four faces, where height and widths are at least 2 µm, fitting inside a 100 µm cube.
- Classification and symbols relevant to needle geometry.
- Views and representations for structural clarity.
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Measurement Methods: IEC 62047-26 outlines precise techniques and equipment used for dimensional evaluation, including:
- Field Emission Scanning Electron Microscopy (FE-SEM)
- Coherence Scanning Interferometry (CSI)
- Stylus Surface Profilers
- Confocal Laser Scanning Microscopy
- Atomic Force Microscopy (AFM)
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Measurement Examples and Uncertainty: The standard provides practical examples illustrating how to measure trench depth, widths, sidewall angles, and needle geometry, including guidance on evaluating measurement uncertainty for consistent and reliable results.
Practical Applications
IEC 62047-26:2016 is instrumental for industries and research fields involving microfabrication, semiconductor manufacturing, and MEMS device development. Its applications include:
- Design Optimization: Accurate geometric descriptions of micro trench and needle structures help engineers optimize MEMS device performance by tailoring dimensions to functional requirements.
- Quality Control and Process Monitoring: Reliable measurement methods support ongoing manufacturing quality assurance and process evaluation of microstructures, ensuring devices meet specifications.
- Process Development and Improvement: The standard aids in characterizing micro trench and needle features after fabrication - essential for refining etching, deposition, and micromachining processes.
- Research and Innovation: Provides a foundation for innovators and scientists working on micro-electromechanical technologies who require systematic characterization protocols.
Related Standards
To complement IEC 62047-26, it is beneficial to consider related standards and technical specifications from IEC TC 47 (Semiconductor devices) and ISO committees dealing with:
- General MEMS device specifications and testing guidelines.
- Semiconductor manufacturing process characterization (e.g., deep reactive-ion etching standards).
- Metrology standards for nanoscale and microscale measurements.
- International vocabulary of terms for micro-electromechanical systems.
Keywords: IEC 62047-26, MEMS, micro trench structures, needle structures, semiconductor devices, micrometer scale measurement, FE-SEM, interferometry, atomic force microscopy, microfabrication, MEMS metrology.
Open preview (PDF)Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
