Overview
The IEC 62047-9:2011 standard provides a comprehensive methodology for measuring wafer-to-wafer bonding strength specifically tailored for Micro-Electromechanical Systems (MEMS). This international standard, published by the International Electrotechnical Commission (IEC), addresses the evaluation of bonding quality in semiconductor devices by defining various test methods applicable to wafer bonding processes such as silicon-to-silicon fusion bonding and silicon-to-glass anodic bonding. It supports measurements for wafers with thicknesses ranging from 10 micrometers to several millimeters, making it highly relevant for MEMS processing and assembly.
Key Topics
Bonding Strength Measurement Techniques
IEC 62047-9:2011 covers multiple practical methods for assessing wafer bonding strength in MEMS devices, including:
- Visual Test: Utilizes color changes and microscopic inspection to verify bonding presence and guide further testing.
- Pull Test: Measures bond strength by applying tensile forces, useful for basic adhesion evaluation.
- Double Cantilever Beam Test Using Blade: Provides insights into fracture mechanics by inserting a blade to create a controlled crack in the bonded interface.
- Electrostatic Test: Applies an electrostatic force to assess bonding integrity, suitable for non-destructive evaluation.
- Blister Test: Examines the bonding quality by pressurizing a cavity to induce delamination, enabling determination of adhesion energies.
- Three-Point Bending Test: Measures the fracture resistance of the bonded interface under bending loads.
- Die Shear Test: Applies shear forces to assess mechanical durability of the bonded layers.
Each method includes standardized equipment, specimen preparation, testing procedures, and result expression to ensure reproducibility and comparability between testing laboratories and manufacturers.
Applicable Bonding Processes and Structures
The standard is applicable to various bonding processes in MEMS fabrication, including:
- Silicon-to-silicon fusion bonding
- Silicon-to-glass anodic bonding
- Other wafer-to-wafer bonding processes commonly used in semiconductor device manufacturing
It supports a wide range of wafer thicknesses (10 µm to several millimeters), making it versatile for various MEMS device architectures.
Normative References
IEC 62047-9 references additional standards such as:
- IEC 60749-19 for die shear strength
- ISO 6892-1 for tensile testing of metallic materials
- ASTM E399 for fracture toughness testing
These references ensure that bonding strength tests are harmonized with broader mechanical and materials testing practices.
Applications
IEC 62047-9:2011 is essential for industries and organizations involved in the development, manufacturing, and quality control of MEMS devices, including:
- MEMS manufacturers aiming to verify and control wafer bonding strength for device reliability.
- Semiconductor device fabricators requiring standardized procedures to evaluate wafer assembly processes.
- Research laboratories and academic institutions working on novel wafer bonding techniques and MEMS device integration.
- Quality assurance teams in MEMS production lines seeking consistent and repeatable measurements of wafer bonding strength.
Testing bonded wafers using IEC 62047-9 methods helps ensure product performance, durability, and minimizes failures related to weak interfacial adhesion in MEMS packaging and assembly.
Related Standards
Professionals utilizing IEC 62047-9 should also consider the following related standards for comprehensive MEMS and semiconductor device testing:
- IEC 60749-19: Mechanical and climatic test methods for semiconductor devices, specifically die shear strength.
- ISO 6892-1: Metallic materials tensile testing, important for mechanical property evaluation of substrates and bonding layers.
- ASTM E399: Standard test method for fracture toughness, valuable for understanding crack propagation through bonded interfaces.
Integration of IEC 62047-9 with these standards supports robust quality control systems and helps comply with international testing and certification requirements in MEMS manufacturing.
Keywords: IEC 62047-9, wafer to wafer bonding, MEMS bonding strength, silicon fusion bonding, anodic bonding, bonding strength measurement, micro-electromechanical devices, MEMS testing standards, semiconductor wafer bonding, die shear test, pull test, blister test, three-point bend test.
Open preview (PDF)Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
