ISO 17331:2004 PDF

Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy

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Title (English):

ISO 17331:2004

Document status:: Active
Format:: Electronic (PDF)
Number of pages:: 18
Publication date:: May 18, 2004
Edition:: ISO IS 17331 edition 1 version 1
ICS:: 71.040.40

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Description (English):

ISO 17331:2004 specifies chemical methods for the collection of iron and/or nickel from the surface of silicon-wafer working reference materials by the vapour-phase decomposition method or the direct acid droplet decomposition method. It applies to iron and/or nickel atomic surface densities from 6 times 10 to the power 9 atoms per square centimetre to 5 times 10 to the power 11 atoms per square centimetre.

Technical details

Technical committee: ISO/TC 201 - Surface chemical analysis
SKU: ISO 17331:2004

Abstract

Overview

ISO 17331:2004 - Surface chemical analysis - Chemical methods for the collection of elements from the surface of silicon‑wafer working reference materials and their determination by total‑reflection X‑ray fluorescence (TXRF) spectroscopy - defines standardized chemical procedures to collect and quantify iron (Fe) and nickel (Ni) from silicon‑wafer working reference materials. The standard covers two collection techniques - vapour‑phase decomposition (VPD) and direct acid droplet decomposition (DADD) - and specifies conditions for subsequent determination primarily by TXRF, with GF‑AAS or ICP‑MS allowed as alternatives.

Key topics and requirements

Scope & sensitivity: Applies to Fe and Ni atomic surface densities from 6 × 10^9 to 5 × 10^11 atoms/cm², targeting ultra‑low metal contamination relevant to semiconductor manufacturing.
Collection methods: Detailed procedures for VPD and DADD to reproducibly transfer surface metals into measurable residues.
Calibration & standards:
- Preparation of calibration specimens and calibration curves using defined calibration solutions.
- Use of an internal standard (vanadium or scandium) to normalize TXRF signal variation.
Reagents & purity:
- Requirements for ultra‑pure water and acids (HF, H2O2, HNO3) with specified concentration ranges and impurity ceilings (pg/ml levels).
- Safety warnings and handling procedures for hazardous reagents (notably hydrofluoric acid).
Apparatus, specimen prep & environment:
- Cleanroom considerations and specimen handling consistent with ISO 14644‑1.
- Instructions on scanning (rolling microdroplets) to cover wafer surface uniformly.
Quality & reporting:
- Guidance on precision (repeatability/reproducibility) and the required test report content.
- Results supported by inter‑laboratory validation data.

Applications and users

ISO 17331:2004 is directly applicable to:

Semiconductor process, metrology and contamination control laboratories performing surface chemical analysis on silicon wafers.
Producers and users of working reference materials for TXRF calibration.
Analytical labs using TXRF, GF‑AAS or ICP‑MS for trace metal surface contamination measurement.
Quality assurance, materials characterization, and equipment manufacturers needing standardized procedures for low‑level Fe/Ni determination.

Practical benefits include improved comparability of ultra‑trace surface contamination data, validated calibration workflows, and documented safety/practice for handling ultra‑pure reagents and HF.

Related standards

ISO 14706:2000 - TXRF determination of surface contamination on silicon wafers
ISO 5725‑2:1994 - Accuracy (trueness and precision) of measurement methods
ISO 14644‑1:1999 - Cleanrooms and controlled environments

Keywords: ISO 17331:2004, TXRF, silicon wafer, vapour‑phase decomposition, direct acid droplet decomposition, surface chemical analysis, iron nickel, working reference materials, semiconductor contamination.

Related standards

Standards mentioned in the description

Abstract

Overview

Key topics and requirements

Scope & sensitivity: Applies to Fe and Ni atomic surface densities from 6 × 10^9 to 5 × 10^11 atoms/cm², targeting ultra‑low metal contamination relevant to semiconductor manufacturing.
Collection methods: Detailed procedures for VPD and DADD to reproducibly transfer surface metals into measurable residues.
Calibration & standards:
- Preparation of calibration specimens and calibration curves using defined calibration solutions.
- Use of an internal standard (vanadium or scandium) to normalize TXRF signal variation.
Reagents & purity:
- Requirements for ultra‑pure water and acids (HF, H2O2, HNO3) with specified concentration ranges and impurity ceilings (pg/ml levels).
- Safety warnings and handling procedures for hazardous reagents (notably hydrofluoric acid).
Apparatus, specimen prep & environment:
- Cleanroom considerations and specimen handling consistent with ISO 14644‑1.
- Instructions on scanning (rolling microdroplets) to cover wafer surface uniformly.
Quality & reporting:
- Guidance on precision (repeatability/reproducibility) and the required test report content.
- Results supported by inter‑laboratory validation data.

Applications and users

ISO 17331:2004 is directly applicable to:

Semiconductor process, metrology and contamination control laboratories performing surface chemical analysis on silicon wafers.
Producers and users of working reference materials for TXRF calibration.
Analytical labs using TXRF, GF‑AAS or ICP‑MS for trace metal surface contamination measurement.
Quality assurance, materials characterization, and equipment manufacturers needing standardized procedures for low‑level Fe/Ni determination.

Related standards

ISO 14706:2000 - TXRF determination of surface contamination on silicon wafers
ISO 5725‑2:1994 - Accuracy (trueness and precision) of measurement methods
ISO 14644‑1:1999 - Cleanrooms and controlled environments

ISO 17331:2004 PDF

Technical details

Abstract

Overview

Key topics and requirements

Applications and users

Related standards

Related standards

Abstract

Overview

Key topics and requirements

Applications and users

Related standards

Related standards

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