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IEC 62047-25:2016 PDF

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

First page of standard IEC 62047-25:2016Open preview (PDF)Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
Title (English):
IEC 62047-25:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

Document status:
Active
Format:
Electronic (PDF)
Number of pages:
45
Publication date:
August 29, 2016
Edition:
IEC IS 62047 edition 1 version 1
ICS:
31.080.99
Description (English):

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Technical details

Technical committee
SC 47F - Micro-electromechanical systems
SKU
IEC 62047-25:2016

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