Overview
IEC 62951-9:2022 specifies standardized performance test methods for unipolar one transistor–one resistor (1T1R) resistive memory cells. It defines electrical measurement procedures to evaluate read, forming, SET and RESET operations, as well as endurance and retention of resistive memory (RRAM) cells. The standard applies to both flexible and rigid semiconductor devices and is technology- and size-agnostic, making it suitable for stretchable electronics and conventional wafers.
Key topics and requirements
- Scope: Test procedures focused on unipolar-type 1T1R resistive memory cells; methods apply to flexible/stretchable and rigid devices.
- Test methods covered:
- Read - measurement of resistive states using defined read voltage/current and pulse widths.
- Forming - procedures to induce initial filament/conduction path in the active layer.
- SET / RESET - programming operations to switch to low-resistance state (LRS) and high-resistance state (HRS).
- Endurance - cycling tests to evaluate device stability over repeated SET/RESET operations.
- Retention - long-term stability measurements of LRS/HRS over time and temperature.
- Test setup & equipment: Use of a semiconductor parameter analyzer, source measure unit (SMU), pulse generator unit (PGU), prober and hot chuck for temperature characterization. Emphasis on ultra-high accuracy sensors for I–V and transient measurements.
- Terminology & metrics: Defines key terms such as read voltage/current, R_LRS, R_HRS, trip-point resistance (R_TRP), forming voltage, step voltage, pulse width and delay time to ensure consistent reporting.
- Test reporting: Guidance on measurement flows, cumulative resistance distributions and example data plots for HRS/LRS, endurance curves and retention traces.
Applications
- Device characterization and qualification for RRAM/1T1R memory development.
- Process development and failure analysis in semiconductor R&D labs (flexible/stretchable electronics).
- Test and verification for manufacturing quality assurance and reliability engineering.
- Benchmarking of novel memory materials and device architectures against standardized procedures.
Who should use this standard
- Semiconductor device engineers and test engineers working on resistive memory (RRAM) and 1T1R arrays.
- Test labs, reliability teams and contract manufacturers performing performance and lifetime assessments.
- Researchers developing flexible/stretchable semiconductor devices and memory integration schemes.
- Standards bodies and product certification organizations seeking harmonized test methods.
Related standards
- Other parts of the IEC 62951 series covering flexible and stretchable semiconductor devices (refer to IEC for the full list).
- Practical keywords: IEC 62951-9, 1T1R, resistive memory, RRAM testing, forming, SET RESET, endurance, retention, semiconductor parameter analyzer, SMU, flexible electronics.
Open preview (PDF)Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
