Overview
IEC 63068-1:2019 - "Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects" - defines a consistent classification scheme for defects observed in as-grown 4H‑SiC homoepitaxial layers. The standard classifies defects by their crystallographic structure and documents how they are recognized using non‑destructive imaging: bright‑field optical microscopy (OM), photoluminescence (PL), and X‑ray topography (XRT) images. Part 1 provides the common vocabulary and visual reference needed for wafer quality assessment in SiC power device manufacturing.
Key topics and technical scope
- Defect classification for as‑grown 4H‑SiC epitaxial layers based on crystallography.
- Non‑destructive recognition methods specified as:
- Bright‑field OM (optical microscopy)
- PL (photoluminescence) imaging
- XRT (X‑ray topography)
- Comprehensive listing of defect classes (illustrated and described), including:
- Point defect
- Micropipe
- TSD (threading screw dislocation)
- TED (threading edge dislocation)
- BPD (basal plane dislocation)
- Scratch trace
- Stacking fault and propagated stacking fault
- Stacking fault complex
- Polytype inclusion
- Particle inclusion and surface particle
- Bunched‑step segment and other surface/extended defects
- Definitions and terms for SiC crystallography (4H, polytypism, basal/prism planes, c‑axis) to ensure consistent interpretation.
Practical applications
- Establishes a standardized framework for wafer inspection, enabling consistent defect identification across suppliers and fabs.
- Supports yield improvement and reliability analysis for SiC power devices by providing standardized defect categories and visual examples.
- Useful for development of automated optical inspection (AOI) and PL imaging algorithms by supplying labeled defect taxonomy for training and benchmarking.
- Aids failure analysis labs, quality assurance teams, and process engineers in correlating defect types with device performance and processing steps.
Who should use this standard
- SiC wafer manufacturers and epitaxy process engineers
- Power semiconductor device makers and reliability engineers
- Inspection equipment vendors and AOI/PL system integrators
- Failure analysis and materials characterization laboratories
- Standards and quality managers working on semiconductor qualification
Related standards
- IEC 63068-2 - Test method for defects using optical inspection (planned in series)
- IEC 63068-3 - Test method for defects using photoluminescence (planned in series)
Keywords: IEC 63068-1, 4H‑SiC, silicon carbide, homoepitaxial wafer, defect classification, non‑destructive recognition, optical microscopy, photoluminescence, X‑ray topography, SiC power devices, wafer inspection.
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