ISO 14706:2014 PDF
Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Open preview (PDF)Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopySurface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
- Document status:
- Active
- Format:
- Electronic (PDF)
- Number of pages:
- 25
- Publication date:
- July 25, 2014
- Edition:
- ISO IS 14706 edition 2 version 1
- ICS:
- 71.040.40
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
Technical details
- Technical committee
- ISO/TC 201 - Surface chemical analysis
- SKU
- ISO 14706:2014
