Overview
ISO 22415:2019 - Surface chemical analysis - Secondary ion mass spectrometry - Method for determining yield volume in argon cluster sputter depth profiling of organic materials - defines a standardized method to measure and report sputtering yield volume when using argon cluster ion beams in SIMS (secondary ion mass spectrometry) depth profiling of organic thin films. The scope covers test samples formed as thin, uniform organic films (50–1 000 nm) on a flat substrate with a different chemistry, requiring homogeneous composition in depth and a rastered sputtering beam to ensure constant ion dose.
Keywords: ISO 22415:2019, argon cluster sputter, secondary ion mass spectrometry, sputtering yield volume, depth profiling, organic materials, surface chemical analysis.
Key topics and technical requirements
- Test sample requirements
- Thin, uniform film(s) of known thickness between 50 nm and 1 000 nm.
- Substrate chemically different from the organic layer.
- Homogeneous depth composition - not applicable for inhomogeneous depth distributions.
- Classification of samples: surface layer, buried layer, or series of layers (series preferred for higher accuracy).
- Instrumentation and sputtering conditions
- Applicable to instruments where the sputtering ion beam is rastered to provide a uniform areic ion dose.
- Reporting of ion source properties (cluster identity, kinetic energy, average cluster size, angle of incidence) and ion current before/after analysis.
- Data acquisition and quality
- Minimum data requirements for secondary ion monitoring, sputtering time, sputtered area, and ion dose.
- Estimation and reporting of uncertainties (thickness, beam current, cluster size, sputtering time).
- Calculation and reporting
- Procedures for calculating sputtering yield volume from single-layer and multiple-thickness profiles, including use of dose vs thickness plots.
- Required reporting elements to enable reproducibility and comparability between laboratories.
- Informative annexes
- Annex A: definitions and measurement examples for sputtered area and beam width.
- Annex B: example depth profiles and calculation walkthroughs.
- Annex C: methods for estimating sputtering yield volumes under varied conditions.
Practical applications and who uses this standard
- Surface analysts and SIMS operators establishing accurate depth scales in organic materials (polymers, biofilms, coatings).
- Materials scientists and failure analysis labs performing three-dimensional chemical mapping.
- Instrument manufacturers and service labs validating argon cluster sputter performance.
- Quality assurance and inter-laboratory comparisons where consistent depth calibration is required.
Using ISO 22415:2019 improves comparability of SIMS depth profiles, enables reliable depth quantification from ion dose and sputtering time, and supports traceable reporting for research, manufacturing, and regulated testing.
Related standards
- ISO 18115-1:2013 (vocabulary for surface chemical analysis) - normative reference used for terms and definitions.
- Prepared by ISO/TC 201, Surface chemical analysis (SC 6: SIMS) - consult national standards bodies or ISO for implementation details.
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